ST13007 high voltage fast-switching npn power transistor n improved specification: - lower leakage current - tighter gain range - dc current gain preselection - tighter storage time range n high voltage capability n npn transistor n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n very high switching speed n fully characterized at 125 o c n large rbsoa applications n electronic ballasts for fluorescent lighting n switch mode power supplies description the device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. they use a cellular emitter structure to enhance switching speeds. internal schematic diagram july 1998 absolute maximum ratings symbol parameter value unit v cev collector-emitter voltage (v be = -1.5v) 700 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c = 0) 9 v i c collector current 8 a i cm collector peak current 16 a i b base current 4 a i bm base peak current 8 a p tot total dissipation at t c 25 o c 80 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 to-220 ? 1/6
thermal data r thj-case thermal resistance junction-case max 1.56 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cev collector cut-off current (v be = -1.5v) v ce = rated v cev v ce = rated v cev t c = 100 o c 10 0.5 m a ma i ebo emitter cut-off current (i c = 0) v eb = 9 v 1 ma v ceo(sus) * collector-emitter sustaining voltage i c = 10 ma 400 v v ce(sat) * collector-emitter saturation voltage i c = 2 a i b = 0.4 a i c = 5 a i b = 1 a i c = 8 a i b = 2 a i c = 5 a i b = 1 a t c = 100 o c 1 2 3 3 v v v v v be(sat) * base-emitter saturation voltage i c = 2 a i b = 0.4 a i c = 5 a i b = 1 a i c = 5 a i b = 1 a t c = 100 o c 1.2 1.6 1.5 v v v h fe * dc current gain i c = 2 a v ce = 5 v group a group b i c = 5 a v ce = 5 v 16 26 5 30 40 30 t s t f resistive load storage time fall time i c = 2 a v cc = 300 v i b1 = 0.4 a i b2 = -0.4 a t p = 30 m s 3 4.5 350 m s ns t s t f inductive load storage time fall time i c = 5 a v cl = 250 v i b1 = 1 a i b2 = -2 a l = 200 m h 1.6 60 2.5 110 m s ns t s tf inductive load storage time fall time i c = 5 a v cl = 250 v i b1 = 1 a i b2 = -2 a l = 200 m h t c = 125 o c 2.3 110 m s ns * pulsed: pulse duration = 300 m s, duty cycle 2 % note : dc current gain pre-selected product (group a and group b). stmicroelectronics reserves the right to ship either groups according to production availability. please contact your nearest stmicroelectronics sales office for delivery details. ST13007 2/6
safe operating areas dc current gain collector emitter saturation voltage derating curve dc current gain base emitter saturation voltage ST13007 3/6
inductive fall time inductive storage time reverse biased soa ST13007 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c ST13007 5/6
information furnished is believed to be accurate and reliable. however, stmicroe lectronics assumes no responsibi lity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or pat ent rights of stm icroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previou sly supplied. stmicroele ctron ics products are not authorized for use as critical components in life support devices or systems without e xpress written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 1998 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of comp anies australia - brazil - canada - china - france - germany - italy - japan - k orea - m alaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . ST13007 6/6
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